I-SAN JOSE -- I-Samsung Electronics Co. izokwethula izinsizakalo zokupakisha ezinezinhlangothi ezintathu (3D) zememori ye-bandwidth ephezulu (i-HBM) phakathi nonyaka, ubuchwepheshe okulindeleke ukuthi buqalwe ngemodeli yesizukulwane sesithupha se-chip yobuhlakani bokwenziwa i-HBM4 ezoqala ngo-2025, ngokusho kwenkampani kanye nemithombo yemboni.
Ngomhlaka-20 Juni, inkampani enkulu kunazo zonke emhlabeni ekhiqiza ama-chip enkumbulo yethule ubuchwepheshe bayo bamuva bokupakisha ama-chip kanye nezindlela zesevisi emcimbini we-Samsung Foundry Forum 2024 owawuseSan Jose, eCalifornia.
Bekungokokuqala i-Samsung ikhipha ubuchwepheshe bokupakisha be-3D bama-chips e-HBM emcimbini womphakathi. Njengamanje, ama-chips e-HBM apakishwa kakhulu ngobuchwepheshe be-2.5D.
Lokhu kwenzeke cishe emavikini amabili ngemuva kokuba umsunguli weNvidia kanye noMphathi Omkhulu uJensen Huang embule ukwakheka kwesizukulwane esisha kwepulatifomu yayo ye-AI iRubin ngesikhathi ekhuluma eTaiwan.
I-HBM4 cishe izofakwa kumodeli entsha ye-Nvidia i-Rubin GPU okulindeleke ukuthi ifike emakethe ngo-2026.
UXHUMANO OLUMILE
Ubuchwepheshe bamuva bokupakisha be-Samsung bufaka ama-chip e-HBM abekwe phezulu phezu kwe-GPU ukuze kusheshiswe ukufunda idatha kanye nokucubungula iziphetho, ubuchwepheshe obubhekwa njengobushintsha umdlalo emakethe yama-chip e-AI ekhula ngokushesha.
Njengamanje, ama-chip e-HBM axhunywe ngokuvundlile ne-GPU ku-silicon interposer ngaphansi kobuchwepheshe bokupakisha be-2.5D.
Uma kuqhathaniswa, ukupakishwa kwe-3D akudingi i-silicon interposer, noma i-substrate encane ehlala phakathi kwama-chips ukuze akwazi ukuxhumana nokusebenza ndawonye. I-Samsung ibiza ubuchwepheshe bayo obusha bokupakishwa ngokuthi i-SAINT-D, okufushaniswa ne-Samsung Advanced Interconnection Technology-D.
INKONZO YE-TURNKEY
Le nkampani yaseNingizimu Korea kuyaqondakala ukuthi inikeza ukupakisha kwe-3D HBM ngokusekelwe ekuthengeni.
Ukuze yenze kanjalo, ithimba layo lokupakisha elithuthukisiwe lizoxhumanisa ngokuqondile ama-chip e-HBM akhiqizwa esigabeni sayo sebhizinisi lememori nama-GPU ahlanganiswe izinkampani ezingenamsebenzi yiyunithi yayo yokukhiqiza.
"Ukupakishwa kwe-3D kunciphisa ukusetshenziswa kwamandla kanye nokubambezeleka kokucubungula, kuthuthukisa ikhwalithi yezimpawu zikagesi zama-semiconductor chips," kusho isikhulu se-Samsung Electronics. Ngo-2027, i-Samsung ihlela ukwethula ubuchwepheshe bokuhlanganisa obuhlukahlukene obuhlanganisa izinto ezibonakalayo ezikhulisa kakhulu ijubane lokudlulisa idatha yama-semiconductors ephaketheni elilodwa elihlanganisiwe lama-accelerator e-AI.
Ngokuhambisana nesidingo esikhulayo sama-chip anamandla aphansi, asebenza kahle kakhulu, i-HBM kulindeleke ukuthi yenze u-30% wemakethe ye-DRAM ngo-2025 kusuka ku-21% ngo-2024, ngokusho kwe-TrendForce, inkampani yocwaningo yaseTaiwan.
I-MGI Research ibikezela ukuthi imakethe yokupakisha ethuthukisiwe, okuhlanganisa nokupakisha kwe-3D, izokhula ifike ku-$80 billion ngo-2032, uma kuqhathaniswa ne-$34.5 billion ngo-2023.
Isikhathi sokuthunyelwe: Juni-10-2024