Isithombe: Unjiniyela we-IVWorks ulinganisa umthombo we-plasma ukuze usetshenziswe ohlelweni lwe-Hybrid MBE olusezingeni lokukhiqiza, olusekela ukukhula kwe-GaN epitaxial okufana kakhulu kanye nekhwalithi ephezulu.
I-transistor ye-gallium nitride (GaN) ene-high-electron-mobility transistor (HEMT) ehlanganisa ubuchwepheshe bokukhulisa kabusha obukhethekile be-reGaN be-IVWorks Co Ltd yaseDaejeon, iNingizimu Korea ibe yi-transistor yokuqala ye-GaN emhlabeni ukufeza imvamisa ephezulu yokuzulazula (f).ubuningi) idlula i-700GHz. Lokhu kuboniswe ngedivayisi ye-GaN HEMT engu-45nm eyakhiwe yithimba locwaningo likaprofesa uDae-hyun Kim eSikoleni Sobunjiniyela Bezogesi eKyungpook National University futhi yethulwa ngomhlaka-18 Juni eSikhumbuzweni se-IEEE/JSAP sika-2026 ku-VLSI Technology & Circuits eHonolulu, eHawaii, e-USA.
Ithimba locwaningo lakha i-transistor ye-GaN enobude besango obungu-45nm futhi lathola irekhodi eliphezulu.ubuningiye-742GHz, okusungula izinga elisha lokusebenza kwe-RF kubuchwepheshe be-transistor ye-GaN. Idivayisi iphinde yathola isilinganiso se-frequency metric (favg) esirekhodiwe esingu-497GHz, inani eliphakeme kakhulu elibikiwe kuze kube manje kunoma yiluphi ubuchwepheshe be-transistor ye-GaN. Le miphumela ikhombisa ukuthi ama-semiconductor e-GaN anokuncintisana okwanele kokusebenza ngisho nasesimweni se-frequency ephezulu kakhulu futhi angasebenza njengeplatifomu esebenzayo yezinhlelo ze-electronic ze-sub-terahertz kanye ne-terahertz zesikhathi esizayo, kusho i-IVWorks.
Ngenkathi ama-transistors asekelwe ku-indium phosphide (InP) esenesikhathi eside ebusa uhlelo lwemvamisa ye-sub-terahertz ngenxa yezakhiwo zawo ezihlukile zokuthutha ama-electron, i-voltage yawo ephansi yokuqhekeka ikhawulela amandla okukhipha kanye nokukhula kwesistimu. Ngokuphambene nalokho, i-GaN inikeza inhlanganisela eyingqayizivele yensimu kagesi eqhekeka kakhulu, ukuminyana kwamandla aphezulu, kanye nokuqina okuhle kakhulu kokushisa, okwenza kube ngabantu abakhangayo bezinhlelo zokusebenza zemvamisa ephezulu kanye namandla aphezulu esizukulwaneni esilandelayo. Kodwa-ke, ukufeza ukusebenza kwemvamisa ephezulu kakhulu nge-GaN kusalokhu kuyinselele enkulu. Ukuze kunqotshwe le mikhawulo, ithimba locwaningo lisebenzise inqubo yesango engu-45nm ethuthukisiwe kanye nokwakhiwa kwedivayisi okulungiselelwe ukukhulisa ukusebenza kwemvamisa ephezulu.
Isici esibalulekile kwaba ubuchwepheshe bokukhulisa kabusha obukhethekile be-IVWorks be-reGaN. Yasungulwa yi-IVWorks kuphela, i-reGaN ikhulisa kabusha ngokukhetha i-GaN yohlobo lwe-n olufakwe kakhulu ezindaweni zomthombo kanye nokukhipha amanzi, okunciphisa kakhulu ukumelana kokuthintana. Njengomlingani wocwaningo oluhlangene kulolu cwaningo, i-IVWorks ibonise lokho okushiwo ukuthi kuyindlela enhle kakhulu yokusebenza kuyo yonke i-wafer engamasentimitha angu-4 futhi yathola ukuphindaphindeka okuvelele. Ngaphezu kwalokho, inkampani inciphise ukumelana kwe-regrowth interface (R).i-int) kuya ku-0.027Ω-mm, kusondela emkhawulweni wethiyori ongafinyeleleka ekugxilweni kwenkampani ethwalayo okuhambisanayo.
“Lolu cwaningo luqhubekisela phambili imikhawulo yokusebenza kwe-RF yama-GaN HEMTs ezingeni elisha futhi lubonisa amandla ama-semiconductors e-GaN okusebenzisa imvamisa ephezulu kakhulu ngokuboniswa kokuqala komhlaba kwe-GaN HEMT ene-h engaphezu kuka-700GHz,” kusho uprofesa uDae-hyun Kim. “Lolu cwaningo lubaluleke kakhulu njengesibonelo esiphumelelayo sokusebenzisana kwezimboni nezemfundo, okuhlanganisa ukukhula kwe-epitaxial okuthuthukisiwe kanye nobuchwepheshe bokukhula kabusha obuvela embonini kanye nobuchwepheshe beyunivesithi ocwaningweni lwamadivayisi kanye nolwesekethe,” enezela.
"Ngokwakhela phezu kwale mpumelelo, sihlela ukusheshisa ukuthuthukiswa kwamadivayisi kagesi esizukulwane esilandelayo e-GaN ahlose izinhlelo zokusebenza ze-terahertz-frequency zokuxhumana kwe-6G kanye nobuchwepheshe bokuzivikela obuthuthukisiwe."
I-IVWorks ithi le mpumelelo igcizelela kakhulu amandla akhulayo obuchwepheshe be-GaN okwandisa ngale kwe-RF yendabuko kanye namandla kagesi kuya kuzinhlelo zokusebenza ezintsha ze-sub-terahertz kanye ne-terahertz, okuhlanganisa ukuxhumana kwe-6G, izinhlelo ze-radar ezithuthukisiwe, ukuxhumana kwesathelayithi, kanye ne-electronics yokuzivikela yesizukulwane esilandelayo.
“I-reGaN ubuchwepheshe obuyinhloko obuvele buphumelele iziqu zekhwalithi enkampanini enkulu yokukhiqiza futhi sebusetshenziswe ekukhiqizeni umthamo,” kusho i-CEO ye-IVWorks uYoung-kyun Noh. “Lokhu kufeziwe kubonisa ukuthi ipulatifomu yethu ye-reGaN esekelwe ku-Hybrid-MBE ayilungelanga nje kuphela ukukhiqiza kodwa futhi iwubuchwepheshe obuyisihluthulelo obuvumela isizukulwane esilandelayo se-sub-terahertz kanye ne-terahertz GaN electronics,” enezela. “Siyaziqhenya ngokubona ubuchwepheshe be-IVWorks bufaka isandla eqophelweni locwaningo elihamba phambili emhlabeni.”
Isikhathi sokuthunyelwe: Julayi-06-2026