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Izindaba Zemboni: Kusungulwe ifektri entsha ye-SiC

Izindaba Zemboni: Kusungulwe ifektri entsha ye-SiC

NgoSepthemba 13, 2024, iResonac yamemezela ukwakhiwa kwesakhiwo esisha sokukhiqiza sama-wafer e-SiC (silicon carbide) ama-semiconductor kagesi eYamagata Plant yayo eHigashine City, eYamagata Prefecture. Kulindeleke ukuthi kuqedwe ngekota yesithathu ka-2025.

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Lesi sakhiwo esisha sizotholakala ngaphakathi kweYamagata Plant yenkampani engaphansi kwayo, iResonac Hard Disk, futhi sizoba nendawo yokwakha engamamitha-skwele angu-5,832. Sizokhiqiza ama-wafer e-SiC (ama-substrate kanye ne-epitaxy). NgoJuni 2023, iResonac yathola isitifiketi esivela kuMnyango Wezomnotho, Ezohwebo kanye Nezimboni njengengxenye yohlelo lokuqinisekisa ukuhlinzekwa kwezinto ezibalulekile eziqokwe ngaphansi koMthetho Wokukhuthazwa Kokuphepha Komnotho, ikakhulukazi izinto ze-semiconductor (ama-wafer e-SiC). Uhlelo lokuqinisekisa ukuhlinzekwa oluvunyiwe yiMnyango Wezomnotho, Ezohwebo kanye Nezimboni ludinga ukutshalwa kwezimali ezingama-yen ayizigidi eziyizinkulungwane ezingu-30.9 ukuqinisa amandla okukhiqiza ama-wafer e-SiC ezisekelweni eziseDolobheni lase-Oyama, eTochigi Prefecture; eDolobheni laseHikone, eShiga Prefecture; eDolobheni laseHigashine, eYamagata Prefecture; kanye naseDolobheni lase-Ichihara, eChiba Prefecture, ngezibonelelo ezifika kuma-yen ayizigidi eziyizinkulungwane ezingu-10.3.

Uhlelo luwukuqala ukuhlinzeka ngama-wafer e-SiC (ama-substrate) e-Oyama City, e-Hikone City, nase-Higashine City ngo-Ephreli 2027, ngomthamo wokukhiqiza waminyaka yonke wezingcezu ezingu-117,000 (olingana nama-intshi angu-6). Ukuhlinzekwa kwama-wafer epitaxial e-SiC e-Ichihara City nase-Higashine City kuhlelelwe ukuqala ngoMeyi 2027, ngomthamo okulindeleke waminyaka yonke wezingcezu ezingu-288,000 (ongashintshiwe).

Ngomhlaka-12 Septhemba 2024, inkampani yabamba umcimbi wokwakha indawo yokwakha eYamagata Plant.


Isikhathi sokuthunyelwe: Septhemba 16-2024